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  march 2009 rev 4 1/12 12 STV250N55F3 n-channel 55 v, 1.5 m ? , 250 a, powerso-10 stripfet? power mosfet features conduction losses reduced low profile, very low parasitic inductance application switching applications description this n-channel enhancement mode power mosfet is the latest refinement of stmicroelectronics unique ?single feature size? strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. the resu lting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. figure 1. internal schematic diagram and connection diagram (top view) type v dss r ds(on) max i d STV250N55F3 55 v < 2.2 m ? 250 a 1 10 powerso-10 table 1. device summary order code marking package packaging STV250N55F3 250n55f3 powerso-10 tape and reel www.st.com
contents STV250N55F3 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STV250N55F3 electrical ratings 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 250 a i d drain current (continuous) at t c = 100 c 175 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 1000 a p tot (2) 2. this value is rated according to rthj-c total dissipation at t c = 25 c 300 w derating factor 2.0 w/c e as (3) 3. starting tj = 25 c, i d = 60 a, v dd = 35 v single pulse avalanche energy 1 j t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max. 0.5 c/w rthj-pcb (1) 1. when mounted on 1 inch 2 fr-4 2 oz cu thermal resistance junction-pcb max. 50 c/w
electrical characteristics STV250N55F3 4/12 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, t c = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v ds = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 75 a 1.5 2.2 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 6800 1450 15 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44 v, i d = 120 a, v gs = 10 v figure 14 100 30 26 nc nc nc
STV250N55F3 electrical characteristics 5/12 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r turn-on delay time rise time v dd = 27.5 v, i d = 60 a r g = 4.7 ? , v gs = 10 v, figure 13 25 150 ns ns t d(off) t f turn-off delay time fall time v dd = 27.5 v, i d = 60 a r g = 4.7 ? , v gs = 10 v, figure 13 110 50 ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sd (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 250 1000 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 120 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, di/dt = 100 a/s v dd = 35 v, t j = 150 c figure 18 60 110 3.5 ns nc a
electrical characteristics STV250N55F3 6/12 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s inlge p u l s e am0 3 164v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp s ingle p u l s e =0.5 2 8 0tok i d 150 100 50 0 0 4 v d s (v) (a) 2 6 200 250 v g s =10v 3 00 3 50 400 5v 6v 7v am0 3 165v1 i d 150 100 50 0 2 v g s (v) 4 (a) 1 3 5 200 250 67 8 9 3 00 3 50 400 v d s =5v 0 am0 3 166v1 r d s (on) 2.0 1.5 1.0 0.5 0 200 i d (a) ( ? ) 100 3 00 2.5 v g s =10v 400 3 .0 am0 3 167v1
STV250N55F3 electrical characteristics 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics
test circuits STV250N55F3 8/12 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform
STV250N55F3 package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STV250N55F3 10/12 powerso-10 mechanical data dim mm min typ max a 3 .70 a1 0.00 0.10 a2 3 .40 3 .60 a 3 1.25 1. 3 5 b 0.40 0.5 3 c0. 3 50.55 d 9 .40 9 .60 d1 7.40 7.60 e1 3 . 8 0 14.40 e1 9 . 3 0 9 .50 e2 7.20 7.60 e 3 5. 9 06.10 e1.27 l0. 9 51.65 <0 o 8 o 006 8 0 39 _e
STV250N55F3 revision history 11/12 5 revision history table 8. document revision history date revision changes 25-oct-2007 1 initial release 20-mar-2008 2 content reworked to improve readability, no technical changes. 10-nov-2008 3 document status promoted from preliminary data to datasheet. 02-mar-2009 4 figure 2 has been updated.
STV250N55F3 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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